start-ver=1.4 cd-journal=joma no-vol=62 cd-vols= no-issue=12 article-no= start-page=125001 end-page= dt-received= dt-revised= dt-accepted= dt-pub-year=2023 dt-pub=20231121 dt-online= en-article= kn-article= en-subject= kn-subject= en-title= kn-title=Photoelectron holographic evidence for the incorporation site of Se and suppressed atomic displacement of the conducting layer of La(O,F)BiSSe en-subtitle= kn-subtitle= en-abstract= kn-abstract=La(O,F)BiS2-xSex is a layered material that is considered to be a candidate exotic superconductor as well as a promising thermoelectrical material. We performed soft X-ray photoelectron holography to study the Se incorporation site and the local atomic arrangement of the conducting layer. A comparison of the experimental holograms with the simulated holograms indicates that Se atoms preferentially occupy the S sites in the conducting Bi–S plane of La(O,F)BiS2. A comparison between the state-of-the-art holographic reconstructions of La(O,F)BiSSe and La(O,F)BiS2 suggests that Se substitution suppresses the displacement of S atoms in La(O,F)BiS2. These results provide photoelectron holographic evidence for the Se incorporation site and the Se-induced suppression of in-plane disorder. en-copyright= kn-copyright= en-aut-name=LiYaJun en-aut-sei=Li en-aut-mei=YaJun kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=1 ORCID= en-aut-name=SunZeXu en-aut-sei=Sun en-aut-mei=ZeXu kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=2 ORCID= en-aut-name=KataokaNoriyuki en-aut-sei=Kataoka en-aut-mei=Noriyuki kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=3 ORCID= en-aut-name=SetoguchiTaro en-aut-sei=Setoguchi en-aut-mei=Taro kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=4 ORCID= en-aut-name=HashimotoYusuke en-aut-sei=Hashimoto en-aut-mei=Yusuke kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=5 ORCID= en-aut-name=TakeuchiSoichiro en-aut-sei=Takeuchi en-aut-mei=Soichiro kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=6 ORCID= en-aut-name=KogaShunjo en-aut-sei=Koga en-aut-mei=Shunjo kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=7 ORCID= en-aut-name=HoshiKazuhisa en-aut-sei=Hoshi en-aut-mei=Kazuhisa kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=8 ORCID= en-aut-name=MizuguchiYoshikazu en-aut-sei=Mizuguchi en-aut-mei=Yoshikazu kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=9 ORCID= en-aut-name=MatsushitaTomohiro en-aut-sei=Matsushita en-aut-mei=Tomohiro kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=10 ORCID= en-aut-name=WakitaTakanori en-aut-sei=Wakita en-aut-mei=Takanori kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=11 ORCID= en-aut-name=MuraokaYuji en-aut-sei=Muraoka en-aut-mei=Yuji kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=12 ORCID= en-aut-name=YokoyaTakayoshi en-aut-sei=Yokoya en-aut-mei=Takayoshi kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=13 ORCID= affil-num=1 en-affil=Engineering Research Center of Integrated Circuit Packaging and Testing, Ministry of Education, Tianshui Normal University kn-affil= affil-num=2 en-affil=Nara Institute of Science and Technology (NAIST) kn-affil= affil-num=3 en-affil=Graduate School of Natural Science and Technology, Okayama University kn-affil= affil-num=4 en-affil=Graduate School of Natural Science and Technology, Okayama University kn-affil= affil-num=5 en-affil=Nara Institute of Science and Technology (NAIST) kn-affil= affil-num=6 en-affil=Nara Institute of Science and Technology (NAIST) kn-affil= affil-num=7 en-affil=Nara Institute of Science and Technology (NAIST) kn-affil= affil-num=8 en-affil=Department of Physics, Tokyo Metropolitan University kn-affil= affil-num=9 en-affil=Department of Physics, Tokyo Metropolitan University kn-affil= affil-num=10 en-affil=Nara Institute of Science and Technology (NAIST) kn-affil= affil-num=11 en-affil=Graduate School of Natural Science and Technology, Okayama University kn-affil= affil-num=12 en-affil=Graduate School of Natural Science and Technology, Okayama University kn-affil= affil-num=13 en-affil=Graduate School of Natural Science and Technology, Okayama University kn-affil= en-keyword=photoelectron holography kn-keyword=photoelectron holography en-keyword=La(O,F)BiS2-x Se x kn-keyword=La(O,F)BiS2-x Se x en-keyword=local structure kn-keyword=local structure en-keyword=dopant site kn-keyword=dopant site END start-ver=1.4 cd-journal=joma no-vol=33 cd-vols= no-issue=3 article-no= start-page=035501 end-page= dt-received= dt-revised= dt-accepted= dt-pub-year=2020 dt-pub=20201016 dt-online= en-article= kn-article= en-subject= kn-subject= en-title= kn-title=Soft x-ray irradiation induced metallization of layered TiNCl en-subtitle= kn-subtitle= en-abstract= kn-abstract=We have performed soft x-ray spectroscopy in order to study the photoirradiation time dependence of the valence band structure and chemical states of layered transition metal nitride chloride TiNCl. Under the soft x-ray irradiation, the intensities of the states near the Fermi level (EF) and the Ti3+ component increased, while the Cl 2p intensity decreased. Ti 2p–3d resonance photoemission spectroscopy confirmed a distinctive Fermi edge with Ti 3d character. These results indicate the photo-induced metallization originates from deintercalation due to Cl desorption, and thus provide a new carrier doping method that controls the conducting properties of TiNCl. en-copyright= kn-copyright= en-aut-name=KataokaNoriyuki en-aut-sei=Kataoka en-aut-mei=Noriyuki kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=1 ORCID= en-aut-name=TanakaMasashi en-aut-sei=Tanaka en-aut-mei=Masashi kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=2 ORCID= en-aut-name=HosodaWataru en-aut-sei=Hosoda en-aut-mei=Wataru kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=3 ORCID= en-aut-name=TaniguchiTakumi en-aut-sei=Taniguchi en-aut-mei=Takumi kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=4 ORCID= en-aut-name=FujimoriShin-ichi en-aut-sei=Fujimori en-aut-mei=Shin-ichi kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=5 ORCID= en-aut-name=WakitaTakanori en-aut-sei=Wakita en-aut-mei=Takanori kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=6 ORCID= en-aut-name=MuraokaYuji en-aut-sei=Muraoka en-aut-mei=Yuji kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=7 ORCID= en-aut-name=YokoyaTakayoshi en-aut-sei=Yokoya en-aut-mei=Takayoshi kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=8 ORCID= affil-num=1 en-affil=Graduate School of Natural Science and Technology, Okayama University kn-affil= affil-num=2 en-affil=Graduate School of Engineering, Kyushu Institute of Technology kn-affil= affil-num=3 en-affil=Graduate School of Natural Science and Technology, Okayama University kn-affil= affil-num=4 en-affil=Graduate School of Natural Science and Technology, Okayama University kn-affil= affil-num=5 en-affil=Materials Sciences Research Center, Japan Atomic Energy Agency kn-affil= affil-num=6 en-affil=Graduate School of Natural Science and Technology, Okayama University kn-affil= affil-num=7 en-affil=Graduate School of Natural Science and Technology, Okayama University kn-affil= affil-num=8 en-affil=Graduate School of Natural Science and Technology, Okayama University kn-affil= END start-ver=1.4 cd-journal=joma no-vol=698 cd-vols= no-issue= article-no= start-page=137854 end-page= dt-received= dt-revised= dt-accepted= dt-pub-year=2020 dt-pub=202003 dt-online= en-article= kn-article= en-subject= kn-subject= en-title= kn-title=Strain effects on spinodal decomposition in TiO2-VO(2)films on TiO2(100) substrates en-subtitle= kn-subtitle= en-abstract= kn-abstract= We investigate the influence of lattice strain in the c-axis direction on spinodal decomposition in rutile TiO2-VO2 films on TiO2(100) substrates. The [100]-oriented Ti0.4V0.6O2 (TVO) solid-solution films are fabricated on rutile TiO2(100) substrates using a pulsed laser deposition with a KrF excimer laser, and are annealed inside the spinodal region. X-ray diffraction and scanning transmission electron microscopy are employed for characterization. Consequently, the in-plane tensile strain in the c-axis direction promotes the Ti-V interdiffusion in TVO/TiO2(100) under thermal annealing. In contrast, relaxation of the tensile strain results in the occurrence of spinodal decomposition along the c-axis direction in the film. These results indicate that the relaxation of the tensile strain in the c-axis direction is critically important for enabling spinodal decomposition in TVO/TiO2(100). Our work helps deepen the understanding of spinodal decomposition in the TVO film and provides information on achieving novel nanostructures via spinodal decomposition in TVO/TiO2(100). en-copyright= kn-copyright= en-aut-name=MuraokaYuji en-aut-sei=Muraoka en-aut-mei=Yuji kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=1 ORCID= en-aut-name=YoshiiFumiya en-aut-sei=Yoshii en-aut-mei=Fumiya kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=2 ORCID= en-aut-name=FukudaTakahiro en-aut-sei=Fukuda en-aut-mei=Takahiro kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=3 ORCID= en-aut-name=ManabeYuji en-aut-sei=Manabe en-aut-mei=Yuji kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=4 ORCID= en-aut-name=YasunoMikiko en-aut-sei=Yasuno en-aut-mei=Mikiko kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=5 ORCID= en-aut-name=TakemotoYoshito en-aut-sei=Takemoto en-aut-mei=Yoshito kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=6 ORCID= en-aut-name=TerashimaKensei en-aut-sei=Terashima en-aut-mei=Kensei kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=7 ORCID= en-aut-name=WakitaTakanori en-aut-sei=Wakita en-aut-mei=Takanori kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=8 ORCID= en-aut-name=YokoyaTakayoshi en-aut-sei=Yokoya en-aut-mei=Takayoshi kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=9 ORCID= affil-num=1 en-affil=Research Institute for Interdisciplinary Science (RIIS), Okayama University kn-affil= affil-num=2 en-affil=Graduate School of Natural Science and Technology, Okayama University kn-affil= affil-num=3 en-affil=Graduate School of Natural Science and Technology, Okayama University kn-affil= affil-num=4 en-affil=Graduate School of Natural Science and Technology, Okayama University kn-affil= affil-num=5 en-affil=Graduate School of Natural Science and Technology, Okayama University kn-affil= affil-num=6 en-affil=Graduate School of Natural Science and Technology, Okayama University kn-affil= affil-num=7 en-affil=Research Institute for Interdisciplinary Science, Okayama University kn-affil= affil-num=8 en-affil=Research Institute for Interdisciplinary Science (RIIS), Okayama University kn-affil= affil-num=9 en-affil= kn-affil= en-keyword=Strain effect kn-keyword=Strain effect en-keyword=Spinodal decomposition kn-keyword=Spinodal decomposition en-keyword=Titanium dioxide kn-keyword=Titanium dioxide en-keyword=Vanadium dioxide kn-keyword=Vanadium dioxide en-keyword=Thin films kn-keyword=Thin films en-keyword=Interdiffusion kn-keyword=Interdiffusion en-keyword=Nanostructure kn-keyword=Nanostructure en-keyword=Pulsed laser deposition kn-keyword=Pulsed laser deposition END start-ver=1.4 cd-journal=joma no-vol=19 cd-vols= no-issue=9 article-no= start-page=5915 end-page=5919 dt-received= dt-revised= dt-accepted= dt-pub-year=2019 dt-pub=20190802 dt-online= en-article= kn-article= en-subject= kn-subject= en-title= kn-title=Asymmetric Phosphorus Incorporation in Homoepitaxial P-Doped (111) Diamond Revealed by Photoelectron Holography en-subtitle= kn-subtitle= en-abstract= kn-abstract= Diamond has two crystallographically inequivalent sites in the unit cell. In doped diamond, dopant occupation in the two sites is expected to be equal. Nevertheless, preferential dopant occupation during growth under nonequilibrium conditions is of fundamental importance, for example, to enhance the properties of nitrogen-vacancy (N-V) centers; therefore, this is a promising candidate for a qubit. However, the lack of suitable experimental techniques has made it difficult to study the crystal- and chemical-site-resolved local structures of dopants. Here, we confirm the identity of two chemical sites with asymmetric dopant incorporation in the diamond structure, via the photoelectron holography (PEH) of heavily phosphorus (P)-doped diamond prepared by chemical vapor deposition. One is substitutionally incorporated P with preferential site occupations and the other can be attributed to a PV split vacancy complex with preferential orientation. The present study shows that PEH is a valuable technique to study the local structures around dopants with a resolution of crystallographically inequivalent but energetically equivalent sites/orientations. Such information provides strategies to improve the properties of dopant related-complexes in which alignment is crucial for sensing of magnetic field or quantum spin register using N-V centers in diamond. en-copyright= kn-copyright= en-aut-name=YokoyaT. en-aut-sei=Yokoya en-aut-mei=T. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=1 ORCID= en-aut-name=TerashimaK. en-aut-sei=Terashima en-aut-mei=K. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=2 ORCID= en-aut-name=TakedaA. en-aut-sei=Takeda en-aut-mei=A. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=3 ORCID= en-aut-name=FukuraT. en-aut-sei=Fukura en-aut-mei=T. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=4 ORCID= en-aut-name=FujiwaraH. en-aut-sei=Fujiwara en-aut-mei=H. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=5 ORCID= en-aut-name=MuroT. en-aut-sei=Muro en-aut-mei=T. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=6 ORCID= en-aut-name=KinoshitaT. en-aut-sei=Kinoshita en-aut-mei=T. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=7 ORCID= en-aut-name=KatoH. en-aut-sei=Kato en-aut-mei=H. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=8 ORCID= en-aut-name=YamasakiS. en-aut-sei=Yamasaki en-aut-mei=S. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=9 ORCID= en-aut-name=OguchiT. en-aut-sei=Oguchi en-aut-mei=T. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=10 ORCID= en-aut-name=WakitaT. en-aut-sei=Wakita en-aut-mei=T. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=11 ORCID= en-aut-name=MuraokaY. en-aut-sei=Muraoka en-aut-mei=Y. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=12 ORCID= en-aut-name=MatsushitaT. en-aut-sei=Matsushita en-aut-mei=T. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=13 ORCID= affil-num=1 en-affil=Research Institute for Interdisciplinary Science (RIIS), Okayama University kn-affil= affil-num=2 en-affil=Research Institute for Interdisciplinary Science (RIIS), Okayama University kn-affil= affil-num=3 en-affil=Graduate School of Science and Technology, Okayama University kn-affil= affil-num=4 en-affil=Graduate School of Science and Technology, Okayama University kn-affil= affil-num=5 en-affil=Graduate School of Science and Technology, Okayama University kn-affil= affil-num=6 en-affil=Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8 kn-affil= affil-num=7 en-affil=Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8 kn-affil= affil-num=8 en-affil=Energy Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) kn-affil= affil-num=9 en-affil=Energy Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) kn-affil= affil-num=10 en-affil=Institute of Scientific and Industrial Research, Osaka University kn-affil= affil-num=11 en-affil=Research Institute for Interdisciplinary Science (RIIS), Okayama University kn-affil= affil-num=12 en-affil=Research Institute for Interdisciplinary Science (RIIS), Okayama University kn-affil= affil-num=13 en-affil=Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8 kn-affil= en-keyword=Dopant local structure kn-keyword=Dopant local structure en-keyword=asymmetric dopant incorporation kn-keyword=asymmetric dopant incorporation en-keyword=diamond kn-keyword=diamond en-keyword=dopant-vacancy complex kn-keyword=dopant-vacancy complex en-keyword=photoelectron holography kn-keyword=photoelectron holography en-keyword=substitutional doping kn-keyword=substitutional doping END start-ver=1.4 cd-journal=joma no-vol=95 cd-vols= no-issue=8 article-no= start-page=085109 end-page= dt-received= dt-revised= dt-accepted= dt-pub-year=2017 dt-pub=201702 dt-online= en-article= kn-article= en-subject= kn-subject= en-title= kn-title=Ce 4f electronic states of CeO1-xFxBiS2 studied by soft x-ray photoemission spectroscopy en-subtitle= kn-subtitle= en-abstract= kn-abstract= We use soft x-ray photoemission spectroscopy (SXPES) to investigate Ce 4f electronic states of a new BiS2 layered superconductor CeO1-xFxBiS2, for polycrystalline and single-crystal samples. The Ce 3d spectrum of the single crystal of nominal composition x = 0.7 has no f(0) component and the spectral shape closely resembles the ones observed for Ce trivalent insulating compounds, strongly implying that the CeO layer is still in an insulating state even after the F doping. The Ce 3d-4f resonant SXPES for both polycrystalline and single-crystal samples shows that the prominent peak is located around 1 eV below the Fermi level (E-F) with negligible spectral intensity at EF. The F-concentration dependence of the valence band spectra for single crystals shows the increases of the degeneracy in energy levels and of the interaction between Ce 4f and S 3p states. These results give insight into the nature of the CeO1-xFx layer and the microscopic coexistence of magnetism and superconductivity in CeO1-xFxBiS2. en-copyright= kn-copyright= en-aut-name=WakitaTakanori en-aut-sei=Wakita en-aut-mei=Takanori kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=1 ORCID= en-aut-name=TerashimaKensei en-aut-sei=Terashima en-aut-mei=Kensei kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=2 ORCID= en-aut-name=HamadaTakahiro en-aut-sei=Hamada en-aut-mei=Takahiro kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=3 ORCID= en-aut-name=FujiwaraHirokazu en-aut-sei=Fujiwara en-aut-mei=Hirokazu kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=4 ORCID= en-aut-name=MinoharaMakoto en-aut-sei=Minohara en-aut-mei=Makoto kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=5 ORCID= en-aut-name=KobayashiMasaki en-aut-sei=Kobayashi en-aut-mei=Masaki kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=6 ORCID= en-aut-name=HoribaKoji en-aut-sei=Horiba en-aut-mei=Koji kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=7 ORCID= en-aut-name=KumigashiraHiroshi en-aut-sei=Kumigashira en-aut-mei=Hiroshi kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=8 ORCID= en-aut-name=KutlukGalif en-aut-sei=Kutluk en-aut-mei=Galif kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=9 ORCID= en-aut-name=NagaoMasanori en-aut-sei=Nagao en-aut-mei=Masanori kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=10 ORCID= en-aut-name=WatauchiSatoshi en-aut-sei=Watauchi en-aut-mei=Satoshi kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=11 ORCID= en-aut-name=TanakaIsao en-aut-sei=Tanaka en-aut-mei=Isao kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=12 ORCID= en-aut-name=DemuraSatoshi en-aut-sei=Demura en-aut-mei=Satoshi kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=13 ORCID= en-aut-name=OkazakiHiroyuki en-aut-sei=Okazaki en-aut-mei=Hiroyuki kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=14 ORCID= en-aut-name=TakanoYoshihiko en-aut-sei=Takano en-aut-mei=Yoshihiko kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=15 ORCID= en-aut-name=MizuguchiYoshikazu en-aut-sei=Mizuguchi en-aut-mei=Yoshikazu kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=16 ORCID= en-aut-name=MiuraOsuke en-aut-sei=Miura en-aut-mei=Osuke kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=17 ORCID= en-aut-name=OkadaKozo en-aut-sei=Okada en-aut-mei=Kozo kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=18 ORCID= en-aut-name=MuraokaYuji en-aut-sei=Muraoka en-aut-mei=Yuji kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=19 ORCID= en-aut-name=YokoyaTakayoshi en-aut-sei=Yokoya en-aut-mei=Takayoshi kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=20 ORCID= affil-num=1 en-affil=Research Laboratory for Surface Science and the Graduate School of Natural Science and Technology, Okayama University kn-affil= affil-num=2 en-affil=Research Laboratory for Surface Science and the Graduate School of Natural Science and Technology, Okayama University kn-affil= affil-num=3 en-affil=Research Laboratory for Surface Science and the Graduate School of Natural Science and Technology, Okayama University kn-affil= affil-num=4 en-affil=Research Laboratory for Surface Science and the Graduate School of Natural Science and Technology, Okayama University kn-affil= affil-num=5 en-affil=Photon Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK) kn-affil= affil-num=6 en-affil=Photon Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK) kn-affil= affil-num=7 en-affil= kn-affil= affil-num=8 en-affil=Photon Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK) kn-affil= affil-num=9 en-affil=Synchrotron Radiation Center, Hiroshima University kn-affil= affil-num=10 en-affil=Center for Crystal Science and Technology, University of Yamanashi kn-affil= affil-num=11 en-affil=Center for Crystal Science and Technology, University of Yamanashi kn-affil= affil-num=12 en-affil=Center for Crystal Science and Technology, University of Yamanashi kn-affil= affil-num=13 en-affil=National Institute for Materials Science kn-affil= affil-num=14 en-affil=National Institute for Materials Science kn-affil= affil-num=15 en-affil=National Institute for Materials Science kn-affil= affil-num=16 en-affil=Department of Electrical and Electronic Engineering, Tokyo Metropolitan University kn-affil= affil-num=17 en-affil=Department of Electrical and Electronic Engineering, Tokyo Metropolitan University kn-affil= affil-num=18 en-affil=Department of Physics and the Graduate school of Natural Science and Technology, Okayama University kn-affil= affil-num=19 en-affil=Research Laboratory for Surface Science and the Graduate School of Natural Science and Technology, Okayama University kn-affil= affil-num=20 en-affil=Research Laboratory for Surface Science and the Graduate School of Natural Science and Technology, Okayama University kn-affil= END start-ver=1.4 cd-journal=joma no-vol=90 cd-vols= no-issue=22 article-no= start-page= end-page= dt-received= dt-revised= dt-accepted= dt-pub-year=2014 dt-pub=20141222 dt-online= en-article= kn-article= en-subject= kn-subject= en-title= kn-title=Proximity to Fermi-surface topological change in superconducting LaO0.54F0.46BiS2 en-subtitle= kn-subtitle= en-abstract= kn-abstract=The electronic structure of nearly optimally doped novel superconductor LaO1−xFxBiS2(x = 0.46) was investigated using angle-resolved photoemission spectroscopy (ARPES). We clearly observed band dispersions from 2 to 6 eV binding energy and near the Fermi level (EF), which are well reproduced by first-principles calculations when the spin-orbit coupling is taken into account. The ARPES intensity map near EF shows a squarelike distribution around the (Z) point in addition to electronlike Fermi-surface (FS) sheets around the X(R) point, indicating that FS of LaO0.54F0.46BiS2 is in close proximity to the theoretically predicted topological change. en-copyright= kn-copyright= en-aut-name=TerashimaKensei en-aut-sei=Terashima en-aut-mei=Kensei kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=1 ORCID= en-aut-name=SonoyamaJunki en-aut-sei=Sonoyama en-aut-mei=Junki kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=2 ORCID= en-aut-name=WakitaTakanori en-aut-sei=Wakita en-aut-mei=Takanori kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=3 ORCID= en-aut-name=SunagawaMasanori en-aut-sei=Sunagawa en-aut-mei=Masanori kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=4 ORCID= en-aut-name=OnoKanta en-aut-sei=Ono en-aut-mei=Kanta kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=5 ORCID= en-aut-name=KumigashiraHiroshi en-aut-sei=Kumigashira en-aut-mei=Hiroshi kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=6 ORCID= en-aut-name=MuroTakayuki en-aut-sei=Muro en-aut-mei=Takayuki kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=7 ORCID= en-aut-name=NagaoMasanori en-aut-sei=Nagao en-aut-mei=Masanori kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=8 ORCID= en-aut-name=WatauchiSatoshi en-aut-sei=Watauchi en-aut-mei=Satoshi kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=9 ORCID= en-aut-name=TanakaIsao en-aut-sei=Tanaka en-aut-mei=Isao kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=10 ORCID= en-aut-name=OkazakiHiroyuki en-aut-sei=Okazaki en-aut-mei=Hiroyuki kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=11 ORCID= en-aut-name=TakanoYoshihiko en-aut-sei=Takano en-aut-mei=Yoshihiko kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=12 ORCID= en-aut-name=MiuraOsuke en-aut-sei=Miura en-aut-mei=Osuke kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=13 ORCID= en-aut-name=MizuguchiYoshikazu en-aut-sei=Mizuguchi en-aut-mei=Yoshikazu kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=14 ORCID= en-aut-name=UsuiHidetomo en-aut-sei=Usui en-aut-mei=Hidetomo kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=15 ORCID= en-aut-name=SuzukiKatsuhiro en-aut-sei=Suzuki en-aut-mei=Katsuhiro kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=16 ORCID= en-aut-name=KurokiKazuhiko en-aut-sei=Kuroki en-aut-mei=Kazuhiko kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=17 ORCID= en-aut-name=MuraokaYuji en-aut-sei=Muraoka en-aut-mei=Yuji kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=18 ORCID= en-aut-name=YokoyaTakayoshi en-aut-sei=Yokoya en-aut-mei=Takayoshi kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=19 ORCID= affil-num=1 en-affil= kn-affil=Graduate School of Natural Science and Technology and Research Laboratory for Surface Science, Okayama University affil-num=2 en-affil= kn-affil=Graduate School of Natural Science and Technology and Research Laboratory for Surface Science, Okayama University affil-num=3 en-affil= kn-affil=Graduate School of Natural Science and Technology and Research Laboratory for Surface Science, Okayama University affil-num=4 en-affil= kn-affil=Graduate School of Natural Science and Technology and Research Laboratory for Surface Science, Okayama University affil-num=5 en-affil= kn-affil=High Energy Accelerator Research Organization (KEK), Photon Factory affil-num=6 en-affil= kn-affil=High Energy Accelerator Research Organization (KEK), Photon Factory affil-num=7 en-affil= kn-affil=Japan Synchrtron Radiation Research Institute (JASRI)/SPring-8 affil-num=8 en-affil= kn-affil=Center for Crystal Science and Technology, University of Yamanashi affil-num=9 en-affil= kn-affil=Center for Crystal Science and Technology, University of Yamanashi affil-num=10 en-affil= kn-affil=Center for Crystal Science and Technology, University of Yamanashi affil-num=11 en-affil= kn-affil=National Institute for Materials Science affil-num=12 en-affil= kn-affil=National Institute for Materials Science affil-num=13 en-affil= kn-affil=Department of Electrical and Electronic Engineering, Tokyo Metropolitan University affil-num=14 en-affil= kn-affil=Department of Electrical and Electronic Engineering, Tokyo Metropolitan University affil-num=15 en-affil= kn-affil=Department of Physics, Osaka University affil-num=16 en-affil= kn-affil=Department of Physics, Osaka University affil-num=17 en-affil= kn-affil=Department of Physics, Osaka University affil-num=18 en-affil= kn-affil=Graduate School of Natural Science and Technology and Research Laboratory for Surface Science, Okayama University affil-num=19 en-affil= kn-affil=1Graduate School of Natural Science and Technology and Research Laboratory for Surface Science END