Opacity effects on extreme ultraviolet (EUV) emission from laser-produced tin (Sn) plasma have been experimentally investigated. An absorption spectrum of a uniform Sn plasma generated by thermal x rays has been measured in the EUV range (9-19 nm wavelength) for the first time. Experimental results indicate that control of the optical depth of the laser-produced Sn plasma is essential for obtaining high conversion to 13.5 nm-wavelength EUV radiation; 1.8% of the conversion efficiency was attained with the use of 2.2 ns laser pulses.
en-copyright= kn-copyright= en-aut-name=FujiokaShinsuke en-aut-sei=Fujioka en-aut-mei=Shinsuke kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=1 ORCID= en-aut-name=NishimuraHiroaki en-aut-sei=Nishimura en-aut-mei=Hiroaki kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=2 ORCID= en-aut-name=NishiharaKatsunobu en-aut-sei=Nishihara en-aut-mei=Katsunobu kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=3 ORCID= en-aut-name=SasakiAkira en-aut-sei=Sasaki en-aut-mei=Akira kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=4 ORCID= en-aut-name=SunaharaAtsushi en-aut-sei=Sunahara en-aut-mei=Atsushi kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=5 ORCID= en-aut-name=OkunoTomoharu en-aut-sei=Okuno en-aut-mei=Tomoharu kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=6 ORCID= en-aut-name=UedaNobuyoshi en-aut-sei=Ueda en-aut-mei=Nobuyoshi kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=7 ORCID= en-aut-name=AndoTsuyoshi en-aut-sei=Ando en-aut-mei=Tsuyoshi kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=8 ORCID= en-aut-name=TaoYezheng en-aut-sei=Tao en-aut-mei=Yezheng kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=9 ORCID= en-aut-name=ShimadaYoshinori en-aut-sei=Shimada en-aut-mei=Yoshinori kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=10 ORCID= en-aut-name=HashimotoKazuhisa en-aut-sei=Hashimoto en-aut-mei=Kazuhisa kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=11 ORCID= en-aut-name=YamauraMichiteru en-aut-sei=Yamaura en-aut-mei=Michiteru kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=12 ORCID= en-aut-name=ShigemoriKeisuke en-aut-sei=Shigemori en-aut-mei=Keisuke kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=13 ORCID= en-aut-name=NakaiMitsuo en-aut-sei=Nakai en-aut-mei=Mitsuo kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=14 ORCID= en-aut-name=NagaiKeiji en-aut-sei=Nagai en-aut-mei=Keiji kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=15 ORCID= en-aut-name=NorimatsuTakayoshi en-aut-sei=Norimatsu en-aut-mei=Takayoshi kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=16 ORCID= en-aut-name=NishikawaTakeshi en-aut-sei=Nishikawa en-aut-mei=Takeshi kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=17 ORCID= en-aut-name=MiyanagaNoriaki en-aut-sei=Miyanaga en-aut-mei=Noriaki kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=18 ORCID= en-aut-name=IzawaYasukazu en-aut-sei=Izawa en-aut-mei=Yasukazu kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=19 ORCID= en-aut-name=MimaKunioki en-aut-sei=Mima en-aut-mei=Kunioki kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=20 ORCID= affil-num=1 en-affil= kn-affil=Osaka University affil-num=2 en-affil= kn-affil=Osaka University affil-num=3 en-affil= kn-affil=Osaka University affil-num=4 en-affil= kn-affil=Advanced Photon Research Center affil-num=5 en-affil= kn-affil=Institute for Laser Technology affil-num=6 en-affil= kn-affil=Osaka University affil-num=7 en-affil= kn-affil=Osaka University affil-num=8 en-affil= kn-affil=Osaka University affil-num=9 en-affil= kn-affil=Osaka University affil-num=10 en-affil= kn-affil=Institute for Laser Technology affil-num=11 en-affil= kn-affil=Institute for Laser Technology affil-num=12 en-affil= kn-affil=Institute for Laser Technology affil-num=13 en-affil= kn-affil=Osaka University affil-num=14 en-affil= kn-affil=Osaka University affil-num=15 en-affil= kn-affil=Osaka University affil-num=16 en-affil= kn-affil=Osaka University affil-num=17 en-affil= kn-affil=Okayama University affil-num=18 en-affil= kn-affil=Osaka University affil-num=19 en-affil= kn-affil=Osaka University affil-num=20 en-affil= kn-affil=Osaka University en-keyword=emission kn-keyword=emission en-keyword=targets kn-keyword=targets en-keyword=lithography kn-keyword=lithography en-keyword=fusion kn-keyword=fusion END start-ver=1.4 cd-journal=joma no-vol=14 cd-vols= no-issue=32 article-no= start-page=23177 end-page=23183 dt-received= dt-revised= dt-accepted= dt-pub-year=2024 dt-pub=20240723 dt-online= en-article= kn-article= en-subject= kn-subject= en-title= kn-title=Lead-free iron-doped Cs3Bi2Br9 perovskite with tunable properties en-subtitle= kn-subtitle= en-abstract= kn-abstract=Perovskite based on cesium bismuth bromide offers a compelling, non-toxic alternative to lead-containing counterparts in optoelectronic applications. However, its widespread usage is hindered by its wide bandgap. This study investigates a significant bandgap tunability achieved by introducing Fe doping into the inorganic, lead-free, non-toxic, and stable Cs3Bi2Br9 perovskite at varying concentrations. The materials were synthesized using a facile method, with the aim of tuning the optoelectronic properties of the perovskite materials. Characterization through techniques such as X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy, energy dispersive spectroscopy (EDS), and UV-vis spectroscopy was conducted to elucidate the transformation mechanism of the doping materials. The substitution process results in a significant change in the bandgap energy, transforming from the pristine Cs3Bi2Br9 with a bandgap of 2.54 eV to 1.78 eV upon 70% Fe doping. The addition of 50% Fe in Cs3Bi2Br9 leads to the formation of the orthorhombic structure in Cs2(Bi,Fe)Br5 perovskite, while complete Fe alloying at 100% results in the phase formation of CsFeBr4 perovskite. Our findings on regulation of bandgap energy and crystal structure through B site substitution hold significant promise for applications in optoelectronics. en-copyright= kn-copyright= en-aut-name=HtunThiri en-aut-sei=Htun en-aut-mei=Thiri kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=1 ORCID= en-aut-name=ElattarAmr en-aut-sei=Elattar en-aut-mei=Amr kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=2 ORCID= en-aut-name=ElbohyHytham en-aut-sei=Elbohy en-aut-mei=Hytham kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=3 ORCID= en-aut-name=TsutsumiKosei en-aut-sei=Tsutsumi en-aut-mei=Kosei kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=4 ORCID= en-aut-name=HoriganeKazumasa en-aut-sei=Horigane en-aut-mei=Kazumasa kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=5 ORCID= en-aut-name=NakanoChiyu en-aut-sei=Nakano en-aut-mei=Chiyu kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=6 ORCID= en-aut-name=GuXiaoyu en-aut-sei=Gu en-aut-mei=Xiaoyu kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=7 ORCID= en-aut-name=SuzukiHiroo en-aut-sei=Suzuki en-aut-mei=Hiroo kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=8 ORCID= en-aut-name=NishikawaTakeshi en-aut-sei=Nishikawa en-aut-mei=Takeshi kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=9 ORCID= en-aut-name=KyawAung Ko Ko en-aut-sei=Kyaw en-aut-mei=Aung Ko Ko kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=10 ORCID= en-aut-name=HayashiYasuhiko en-aut-sei=Hayashi en-aut-mei=Yasuhiko kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=11 ORCID= affil-num=1 en-affil=Graduate School of Natural Science and Technology, Okayama University kn-affil= affil-num=2 en-affil=Department of Chemistry, Faculty of Science, Ain Shams University kn-affil= affil-num=3 en-affil=Physics Department, Faculty of Science, Damietta University kn-affil= affil-num=4 en-affil=Graduate School of Natural Science and Technology, Okayama University kn-affil= affil-num=5 en-affil=Research Institute for Interdisciplinary Science, Okayama University kn-affil= affil-num=6 en-affil=Advanced Science Research Center, Okayama University kn-affil= affil-num=7 en-affil=Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting and Department of Electronic & Electrical Engineering, Southern University of Science and Technology kn-affil= affil-num=8 en-affil=Graduate School of Natural Science and Technology, Okayama University kn-affil= affil-num=9 en-affil=Graduate School of Natural Science and Technology, Okayama University kn-affil= affil-num=10 en-affil=Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting and Department of Electronic & Electrical Engineering, Southern University of Science and Technology kn-affil= affil-num=11 en-affil=Graduate School of Natural Science and Technology, Okayama University kn-affil= END start-ver=1.4 cd-journal=joma no-vol=10 cd-vols= no-issue=1 article-no= start-page=7307 end-page= dt-received= dt-revised= dt-accepted= dt-pub-year=2020 dt-pub=20200429 dt-online= en-article= kn-article= en-subject= kn-subject= en-title= kn-title=Controlling Electronic States of Few-walled Carbon Nanotube Yarn via Joule-annealing and p-type Doping Towards Large Thermoelectric Power Factor en-subtitle= kn-subtitle= en-abstract= kn-abstract=Flexible, light-weight and robust thermoelectric (TE) materials have attracted much attention to convert waste heat from low-grade heat sources, such as human body, to electricity. Carbon nanotube (CNT) yarn is one of the potential TE materials owing to its narrow band-gap energy, high charge carrier mobility, and excellent mechanical property, which is conducive for flexible and wearable devices. Herein, we propose a way to improve the power factor of CNT yarns fabricated from few-walled carbon nanotubes (FWCNTs) by two-step method; Joule-annealing in the vacuum followed by doping with p-type dopants, 2,3,5,6-tetrafluo-7,7,8,8-tetracyanoquinodimethane (F4TCNQ). Numerical calculations and experimental results explain that Joule-annealing and doping modulate the electronic states (Fermi energy level) of FWCNTs, resulting in extremely large thermoelectric power factor of 2250 mu Wm(-1) K-2 at a measurement temperature of 423K. Joule-annealing removes amorphous carbon on the surface of the CNT yarn, which facilitates doping in the subsequent step, and leads to higher Seebeck coefficient due to the transformation from (semi) metallic to semiconductor behavior. Doping also significantly increases the electrical conductivity due to the effective charge transfers between CNT yarn and F4TCNQ upon the removal of amorphous carbon after Joule-annealing. en-copyright= kn-copyright= en-aut-name=MyintMay Thu Zar en-aut-sei=Myint en-aut-mei=May Thu Zar kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=1 ORCID= en-aut-name=NishikawaTakeshi en-aut-sei=Nishikawa en-aut-mei=Takeshi kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=2 ORCID= en-aut-name=OmotoKazuki en-aut-sei=Omoto en-aut-mei=Kazuki kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=3 ORCID= en-aut-name=InoueHirotaka en-aut-sei=Inoue en-aut-mei=Hirotaka kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=4 ORCID= en-aut-name=YamashitaYoshifumi en-aut-sei=Yamashita en-aut-mei=Yoshifumi kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=5 ORCID= en-aut-name=KyawAung Ko Ko en-aut-sei=Kyaw en-aut-mei=Aung Ko Ko kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=6 ORCID= en-aut-name=HayashiYasuhiko en-aut-sei=Hayashi en-aut-mei=Yasuhiko kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=7 ORCID= affil-num=1 en-affil=Graduate School of Natural Science and Technology, Okayama University kn-affil= affil-num=2 en-affil=Graduate School of Natural Science and Technology, Okayama University kn-affil= affil-num=3 en-affil=Graduate School of Natural Science and Technology, Okayama University kn-affil= affil-num=4 en-affil=Graduate School of Natural Science and Technology, Okayama University kn-affil= affil-num=5 en-affil=Graduate School of Natural Science and Technology, Okayama University kn-affil= affil-num=6 en-affil=Department of Electrical and Electronic Engineering, Southern University of Science and Technology kn-affil= affil-num=7 en-affil=Graduate School of Natural Science and Technology, Okayama University kn-affil= en-keyword=Materials science kn-keyword=Materials science en-keyword=Nanoscience and technology kn-keyword=Nanoscience and technology END