ID | 48743 |
FullText URL | |
Author |
Muraoka, Y
Kaken ID
researchmap
Saeki, K
Yao, Y
Wakita, T
Hirai, M
Eguchi, R
Shin, S
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Abstract | We present the results of angle-resolved photoemission spectroscopy (ARPES) measurements of metallic VO2 thin films. The VO2 thin films have been grown on TiO2 (0 0 1) single crystal substrates using pulsed laser deposition. The films exhibit a first-order metal–insulator transition (MIT) at 305 K. In the ARPES spectra of the metallic phase for the films, the O 2p band shows highly dispersive feature in the binding energy range of 3–8 eV along the Г–Z direction. The periodicity of the dispersive band is found to be 2.2 Å-1 which is almost identical with the periodicity expected from the c-axis length of the VO2 thin films. The overall feature of the experimental band structure is similar to the band structure calculations, supporting that we have succeeded in observing the dispersive band of the O 2p state in the metallic VO2 thin film. The present work indicates that the ARPES measurements using epitaxial thin films are promising for determining the band structure of VO2.
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Keywords | ARPES
VO<sub>2</sub>
Thin film
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Published Date | 2010-08
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Publication Title |
Journal of Electron Spectroscopy and Related Phenomena
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Volume | volume181
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Issue | issue2-3
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Publisher | Elsevier
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Start Page | 249
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End Page | 251
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ISSN | 0368-2048
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NCID | AA00697082
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Content Type |
Journal Article
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Project |
Research Center of New Functional Materials for Energy Production, Storage, and Transport
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Official Url | http://www.sciencedirect.com/science/article/pii/S0368204810000149
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language |
English
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Copyright Holders | Copyright © 2010 Elsevier B.V. All rights reserved.
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File Version | author
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Refereed |
True
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DOI | |
Web of Science KeyUT |