IOP PublishingActa Medica Okayama0953-89843332020Soft x-ray irradiation induced metallization of layered TiNCl035501ENNoriyukiKataokaGraduate School of Natural Science and Technology, Okayama UniversityMasashiTanakaGraduate School of Engineering, Kyushu Institute of TechnologyWataruHosodaGraduate School of Natural Science and Technology, Okayama UniversityTakumiTaniguchiGraduate School of Natural Science and Technology, Okayama UniversityShin-ichiFujimoriMaterials Sciences Research Center, Japan Atomic Energy AgencyTakanoriWakitaGraduate School of Natural Science and Technology, Okayama UniversityYujiMuraokaGraduate School of Natural Science and Technology, Okayama UniversityTakayoshiYokoyaGraduate School of Natural Science and Technology, Okayama UniversityWe have performed soft x-ray spectroscopy in order to study the photoirradiation time dependence of the valence band structure and chemical states of layered transition metal nitride chloride TiNCl. Under the soft x-ray irradiation, the intensities of the states near the Fermi level (EF) and the Ti3+ component increased, while the Cl 2p intensity decreased. Ti 2p–3d resonance photoemission spectroscopy confirmed a distinctive Fermi edge with Ti 3d character. These results indicate the photo-induced metallization originates from deintercalation due to Cl desorption, and thus provide a new carrier doping method that controls the conducting properties of TiNCl.No potential conflict of interest relevant to this article was reported.IOP PublishingActa Medica Okayama0021-492262122023Photoelectron holographic evidence for the incorporation site of Se and suppressed atomic displacement of the conducting layer of La(O,F)BiSSe125001ENYaJunLiEngineering Research Center of Integrated Circuit Packaging and Testing, Ministry of Education, Tianshui Normal UniversityZeXuSunNara Institute of Science and Technology (NAIST)NoriyukiKataokaGraduate School of Natural Science and Technology, Okayama UniversityTaroSetoguchiGraduate School of Natural Science and Technology, Okayama UniversityYusukeHashimotoNara Institute of Science and Technology (NAIST)SoichiroTakeuchiNara Institute of Science and Technology (NAIST)ShunjoKogaNara Institute of Science and Technology (NAIST)KazuhisaHoshiDepartment of Physics, Tokyo Metropolitan UniversityYoshikazuMizuguchiDepartment of Physics, Tokyo Metropolitan UniversityTomohiroMatsushitaNara Institute of Science and Technology (NAIST)TakanoriWakitaGraduate School of Natural Science and Technology, Okayama UniversityYujiMuraokaGraduate School of Natural Science and Technology, Okayama UniversityTakayoshiYokoyaGraduate School of Natural Science and Technology, Okayama UniversityLa(O,F)BiS2-xSex is a layered material that is considered to be a candidate exotic superconductor as well as a promising thermoelectrical material. We performed soft X-ray photoelectron holography to study the Se incorporation site and the local atomic arrangement of the conducting layer. A comparison of the experimental holograms with the simulated holograms indicates that Se atoms preferentially occupy the S sites in the conducting Bi–S plane of La(O,F)BiS2. A comparison between the state-of-the-art holographic reconstructions of La(O,F)BiSSe and La(O,F)BiS2 suggests that Se substitution suppresses the displacement of S atoms in La(O,F)BiS2. These results provide photoelectron holographic evidence for the Se incorporation site and the Se-induced suppression of in-plane disorder.No potential conflict of interest relevant to this article was reported.