start-ver=1.4
cd-journal=joma
no-vol=401
cd-vols=
no-issue=
article-no=
start-page=218
end-page=221
dt-received=
dt-revised=
dt-accepted=
dt-pub-year=2008
dt-pub=20080629
dt-online=
en-article=
kn-article=
en-subject=
kn-subject=
en-title=
kn-title=Formation of low-resistivity region in p-Si substrate of SiGe/Si episystem by remote-hydrogen plasma treatment
en-subtitle=
kn-subtitle=
en-abstract=
kn-abstract=<p>We have studied effects of hydrogen treatment on the resistivity profile of the SiGe/Si episystem by spreading resistance (SR) method. In this paper, we present experimental findings that hydrogen treatment reduces the resistivity at a specific part in the Si substrate region. This position was confirmed to be under the interface between SiGe and Si that emerged on the bevel surface during hydrogen treatment. We investigated the depth of resistivity-reduced regions which was formed by various hydrogenating conditions and found that the region was extended to the same depth as the penetration depth of hydrogen. We concluded that the low-resistivity region was formed under the influence of hydrogen introduced from bevel surface. We attributed this resistivity reduction to formation of some defects which originally existed at the interface and diffused into Si substrate with hydrogen.</p>
en-copyright=
kn-copyright=

en-aut-name=YamashitaYoshifumi
en-aut-sei=Yamashita
en-aut-mei=Yoshifumi
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=1
ORCID=

en-aut-name=SakamotoYoshifumi
en-aut-sei=Sakamoto
en-aut-mei=Yoshifumi
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=2
ORCID=

en-aut-name=KamiuraYoichi
en-aut-sei=Kamiura
en-aut-mei=Yoichi
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=3
ORCID=

en-aut-name=IshiyamaTakeshi
en-aut-sei=Ishiyama
en-aut-mei=Takeshi
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=4
ORCID=

affil-num=1
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=2
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=3
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=4
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University
en-keyword=SiGe/Si
kn-keyword=SiGe/Si
en-keyword=Hydroge. Resistivity reduction
kn-keyword=Hydroge. Resistivity reduction
en-keyword=Interface
kn-keyword=Interface
END