ID | 60104 |
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Author |
Okamoto, Hideki
Graduate School of Natural Science and Technology, Okayama University
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Hamao, Shino
Research Institute for Interdisciplinary Science, Okayama University
Kozasa, Keiko
Graduate School of Natural Science and Technology, Okayama University
Wang, Yanan
Research Institute for Interdisciplinary Science, Okayama University
Kubozono, Yoshihiro
Research Institute for Interdisciplinary Science, Okayama University
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Pan, Yong-He
Department of Physics & Center for Quantum Technology, National Tsing Hua University
Yen, Yu-Hsiang
Department of Physics & Center for Quantum Technology, National Tsing Hua University
Hoffmann, Germar
Department of Physics & Center for Quantum Technology, National Tsing Hua University
Tani, Fumito
Institute for Materials Chemistry and Engineering, Kyushu University
Goto, Kenta
Institute for Materials Chemistry and Engineering, Kyushu University
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Abstract | Field-effect transistors (FETs) were fabricated using a new type of phenacene molecule, 3,12-ditetradecyl[7]phenacene ((C14H29)2-[7]phenacene), and solid gate dielectrics or an electric double layer (EDL) capacitor with an ionic liquid (1-butyl-3-methylimidazolium hexafluorophosphate (bmim[PF6])). The new molecule, (C14H29)2-[7]phenacene, was efficiently synthesized via the Mallory photoreaction. Its crystal structure and electronic properties were determined, using X-ray diffraction, scanning tunneling microscopy/spectroscopy (STM and STS), absorption spectroscopy, and photoelectron yield spectroscopy, which showed a monoclinic crystal lattice (space group P21 (no. 4)) and an energy gap of ∼3.0 eV. The STM image clearly showed the molecular structure of (C14H29)2-[7]phenacene, as well as the closed molecular stacking, indicative of a strong fastener effect between alkyl chains. The X-ray diffraction pattern of thin films of (C14H29)2-[7]phenacene formed on a SiO2/Si substrate suggested that the molecule stood on the surface with an inclined angle of 30° with respect to the normal axis of the surface. The FET properties were recorded in two-terminal measurement mode, showing p-channel normally-off characteristics. The averaged values of field-effect mobility, μ, were 1.6(3) cm2 V−1 s−1 for a (C14H29)2-[7]phenacene thin-film FET with a SiO2 gate dielectric and 6(4) × 10−1 cm2 V−1 s−1 for a (C14H29)2-[7]phenacene thin-film EDL FET with bmim[PF6]. Thus, higher FET performance was obtained with an FET using a thin film of (C14H29)2-[7]phenacene compared to parent [7]phenacene. This study could pioneer an avenue for the realization of high-performance FETs through the addition of alkyl chains to phenacene molecules.
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Note | This fulltext is available in Apr. 2021.
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Published Date | 2020-04-18
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Publication Title |
Journal of Materials Chemistry C
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Volume | volume8
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Issue | issue22
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Publisher | Royal Society of Chemistry
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Start Page | 7422
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End Page | 7435
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ISSN | 2050-7526
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NCID | AA12605026
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Content Type |
Journal Article
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language |
English
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OAI-PMH Set |
岡山大学
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Copyright Holders | © The Royal Society of Chemistry 2020
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File Version | author
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DOI | |
Web of Science KeyUT | |
Related Url | isVersionOf https://doi.org/10.1039/D0TC00272K
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Funder Name |
Ministry of Education, Culture, Sports, Science and Technology
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助成番号 | 26105004
17K05976
17K05500
18K04940
18K18736
19H02676
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