start-ver=1.4
cd-journal=joma
no-vol=8
cd-vols=
no-issue=22
article-no=
start-page=7422
end-page=7435
dt-received=
dt-revised=
dt-accepted=
dt-pub-year=2020
dt-pub=20200418
dt-online=
en-article=
kn-article=
en-subject=
kn-subject=
en-title=
kn-title=Synthesis of [7]phenacene incorporating tetradecyl chains in the axis positions and its application in field-effect transistors
en-subtitle=
kn-subtitle=
en-abstract=
kn-abstract=Field-effect transistors (FETs) were fabricated using a new type of phenacene molecule, 3,12-ditetradecyl[7]phenacene ((C14H29)2-[7]phenacene), and solid gate dielectrics or an electric double layer (EDL) capacitor with an ionic liquid (1-butyl-3-methylimidazolium hexafluorophosphate (bmim[PF6])). The new molecule, (C14H29)2-[7]phenacene, was efficiently synthesized via the Mallory photoreaction. Its crystal structure and electronic properties were determined, using X-ray diffraction, scanning tunneling microscopy/spectroscopy (STM and STS), absorption spectroscopy, and photoelectron yield spectroscopy, which showed a monoclinic crystal lattice (space group P21 (no. 4)) and an energy gap of ∼3.0 eV. The STM image clearly showed the molecular structure of (C14H29)2-[7]phenacene, as well as the closed molecular stacking, indicative of a strong fastener effect between alkyl chains. The X-ray diffraction pattern of thin films of (C14H29)2-[7]phenacene formed on a SiO2/Si substrate suggested that the molecule stood on the surface with an inclined angle of 30° with respect to the normal axis of the surface. The FET properties were recorded in two-terminal measurement mode, showing p-channel normally-off characteristics. The averaged values of field-effect mobility, μ, were 1.6(3) cm2 V−1 s−1 for a (C14H29)2-[7]phenacene thin-film FET with a SiO2 gate dielectric and 6(4) × 10−1 cm2 V−1 s−1 for a (C14H29)2-[7]phenacene thin-film EDL FET with bmim[PF6]. Thus, higher FET performance was obtained with an FET using a thin film of (C14H29)2-[7]phenacene compared to parent [7]phenacene. This study could pioneer an avenue for the realization of high-performance FETs through the addition of alkyl chains to phenacene molecules.
en-copyright=
kn-copyright=

en-aut-name=OkamotoHideki
en-aut-sei=Okamoto
en-aut-mei=Hideki
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=1
ORCID=

en-aut-name=HamaoShino
en-aut-sei=Hamao
en-aut-mei=Shino
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=2
ORCID=

en-aut-name=KozasaKeiko
en-aut-sei=Kozasa
en-aut-mei=Keiko
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=3
ORCID=

en-aut-name=WangYanan
en-aut-sei=Wang
en-aut-mei=Yanan
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=4
ORCID=

en-aut-name=KubozonoYoshihiro
en-aut-sei=Kubozono
en-aut-mei=Yoshihiro
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=5
ORCID=

en-aut-name=PanYong-He
en-aut-sei=Pan
en-aut-mei=Yong-He
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=6
ORCID=

en-aut-name=YenYu-Hsiang
en-aut-sei=Yen
en-aut-mei=Yu-Hsiang
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=7
ORCID=

en-aut-name=HoffmannGermar
en-aut-sei=Hoffmann
en-aut-mei=Germar
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=8
ORCID=

en-aut-name=TaniFumito
en-aut-sei=Tani
en-aut-mei=Fumito
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=9
ORCID=

en-aut-name=GotoKenta
en-aut-sei=Goto
en-aut-mei=Kenta
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=10
ORCID=

affil-num=1
en-affil=Graduate School of Natural Science and Technology, Okayama University
kn-affil=

affil-num=2
en-affil=Research Institute for Interdisciplinary Science, Okayama University
kn-affil=

affil-num=3
en-affil=Graduate School of Natural Science and Technology, Okayama University
kn-affil=

affil-num=4
en-affil=Research Institute for Interdisciplinary Science, Okayama University
kn-affil=

affil-num=5
en-affil=Research Institute for Interdisciplinary Science, Okayama University
kn-affil=

affil-num=6
en-affil=Department of Physics & Center for Quantum Technology, National Tsing Hua University
kn-affil=

affil-num=7
en-affil=Department of Physics & Center for Quantum Technology, National Tsing Hua University
kn-affil=

affil-num=8
en-affil=Department of Physics & Center for Quantum Technology, National Tsing Hua University
kn-affil=

affil-num=9
en-affil=Institute for Materials Chemistry and Engineering, Kyushu University
kn-affil=

affil-num=10
en-affil=Institute for Materials Chemistry and Engineering, Kyushu University
kn-affil=
END