Output properties of C₆₀ field-effect transistor device with Eu source/drain electrodes

Field-effect transistor (FET) device with thin films of C₆₀ has been fabricated with Eu electrodes exhibiting small work function. The C₆₀ FET device shows n-channel FET properties with high field-effect mobility, 0.50 cm² V^?1 s^?1. Furthermore, nonvanishing drain current, i.e., normally on, is observed in this FET device. This originates from small energy barrier for electron from Eu source electrode to lowest unoccupied molecular orbital of C₆₀.

Digital Object Identifier:10.1063/1.2337990
Published with permission from the copyright holder. This is the institute's copy, as published in Applied Physics Letters, 21 August 2006, 89, 083511, (3 Pages).
Publisher URL:http://dx.doi.org/10.1063/1.2337990
Copyright © 2006 American Institute of Physics. All rights reserved.