start-ver=1.4 cd-journal=joma no-vol=89 cd-vols= no-issue=8 article-no= start-page=083511-1 end-page=083511-3 dt-received= dt-revised= dt-accepted= dt-pub-year=2006 dt-pub=20068 dt-online= en-article= kn-article= en-subject= kn-subject= en-title= kn-title=Output properties of C60 field-effect transistor device with Eu source/drain electrodes en-subtitle= kn-subtitle= en-abstract= kn-abstract=

Field-effect transistor (FET) device with thin films of C60 has been fabricated with Eu electrodes exhibiting small work function. The C60 FET device shows n-channel FET properties with high field-effect mobility, 0.50 cm2 V?1 s?1. Furthermore, nonvanishing drain current, i.e., normally on, is observed in this FET device. This originates from small energy barrier for electron from Eu source electrode to lowest unoccupied molecular orbital of C60.

en-copyright= kn-copyright= en-aut-name=KubozonoYoshihiro en-aut-sei=Kubozono en-aut-mei=Yoshihiro kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=1 ORCID= en-aut-name=OchiKenji en-aut-sei=Ochi en-aut-mei=Kenji kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=2 ORCID= en-aut-name=NaganoTakayuki en-aut-sei=Nagano en-aut-mei=Takayuki kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=3 ORCID= en-aut-name=OhtaToshio en-aut-sei=Ohta en-aut-mei=Toshio kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=4 ORCID= en-aut-name=NouchiRyo en-aut-sei=Nouchi en-aut-mei=Ryo kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=5 ORCID= en-aut-name=MatsuokaYukitaka en-aut-sei=Matsuoka en-aut-mei=Yukitaka kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=6 ORCID= en-aut-name=ShikohEiji en-aut-sei=Shikoh en-aut-mei=Eiji kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=7 ORCID= en-aut-name=FujiwaraAkihiko en-aut-sei=Fujiwara en-aut-mei=Akihiko kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=8 ORCID= affil-num=1 en-affil= kn-affil=Okayama University affil-num=2 en-affil= kn-affil=Okayama University affil-num=3 en-affil= kn-affil=Okayama University affil-num=4 en-affil= kn-affil=Okayama University affil-num=5 en-affil= kn-affil=Okayama University affil-num=6 en-affil= kn-affil=Japan Institute of Science and Technology affil-num=7 en-affil= kn-affil=Japan Institute of Science and Technology affil-num=8 en-affil= kn-affil=Japan Institute of Science and Technology en-keyword=device physics kn-keyword=device physics en-keyword=C60 kn-keyword=C60 en-keyword=Eu electrodes kn-keyword=Eu electrodes END