start-ver=1.4 cd-journal=joma no-vol=87 cd-vols= no-issue=2 article-no= start-page=023501 end-page=023501 dt-received= dt-revised= dt-accepted= dt-pub-year=2005 dt-pub=20057 dt-online= en-article= kn-article= en-subject= kn-subject= en-title= kn-title=Fabrication of field-effect transistor device with higher fullerene, C88 en-subtitle= kn-subtitle= en-abstract= kn-abstract=

A fullerene field-effect transistor (FET) device has been fabricated with thin films of C88, and n-channel normally-on depletion-type FET properties have been found in this FET device. The C88 FET exhibited a high mobility, μ, of 2.5 x 10-3 cm2 V-1 s-1 at 300 K, in fullerene FETs. The carrier transport showed a thermally-activated hopping transport. The n-channel normally-on FET properties and the hopping transport reflect the small mobility gap and low carrier concentration in the channel region of C88 thin-films.

en-copyright= kn-copyright= en-aut-name=NaganoTakayuki en-aut-sei=Nagano en-aut-mei=Takayuki kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=1 ORCID= en-aut-name=SugiyamaHiroyuki en-aut-sei=Sugiyama en-aut-mei=Hiroyuki kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=2 ORCID= en-aut-name=KuwaharaEiji en-aut-sei=Kuwahara en-aut-mei=Eiji kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=3 ORCID= en-aut-name=WatanabeRie en-aut-sei=Watanabe en-aut-mei=Rie kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=4 ORCID= en-aut-name=KusaiHaruka en-aut-sei=Kusai en-aut-mei=Haruka kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=5 ORCID= en-aut-name=KashinoYoko en-aut-sei=Kashino en-aut-mei=Yoko kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=6 ORCID= en-aut-name=KubozonoYoshihiro en-aut-sei=Kubozono en-aut-mei=Yoshihiro kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=7 ORCID= affil-num=1 en-affil= kn-affil=Okayama University affil-num=2 en-affil= kn-affil=Okayama University affil-num=3 en-affil= kn-affil=Okayama University affil-num=4 en-affil= kn-affil=Okayama University affil-num=5 en-affil= kn-affil=Okayama University affil-num=6 en-affil= kn-affil=Okayama University affil-num=7 en-affil= kn-affil=Okayama University en-keyword=fullerene devices kn-keyword=fullerene devices en-keyword=field effect transistors kn-keyword=field effect transistors en-keyword=carrier density kn-keyword=carrier density en-keyword=carrier mobility kn-keyword=carrier mobility en-keyword=hopping conduction kn-keyword=hopping conduction END