FullText URL fulltext.pdf
Author Oshime, Norihiro| Kano, Jun| Ikenaga, Eiji| Yasui, Shintaro| Hamasaki, Yosuke| Yasuhara, Sou| Hinokuma, Satoshi| Ikeda, Naoshi| Janolin, Pierre-Eymeric| Kiat, Jean-Michel| Itoh, Mitsuru| Yokoya, Takayoshi| Fujii, Tatsuo| Yasui, Akira| Osawa, Hitoshi|
Published Date 2020-07-01
Publication Title Scientific Reports
Volume volume10
Issue issue1
Publisher Nature
Start Page 10702
ISSN 2045-2322
Content Type Journal Article
language 英語
OAI-PMH Set 岡山大学
Copyright Holders © The Author(s) 2020
File Version publisher
PubMed ID 32612212
DOI 10.1038/s41598-020-67651-w
Web of Science KeyUT 000546550700016
Related Url isVersionOf https://doi.org/10.1038/s41598-020-67651-w
FullText URL SR9_1_8041.pdf
Author Yoshioka, Yohsuke| Yamachika, Eiki| Nakanishi, Makoto| Ninomiya, Tadashi| Akashi, Sho| Kondo, Sei| Moritani, Norifumi| Kobayashi, Yasuhiro| Fujii, Tatsuo| Iida, Seiji|
Published Date 2019-5-29
Publication Title Scientific Reports
Volume volume9
Publisher Nature Publishing Group
Start Page 8041
ISSN 2045-2322
Content Type Journal Article
language 英語
OAI-PMH Set 岡山大学
Copyright Holders © The Author(s) 2019
File Version publisher
PubMed ID 31142769
DOI 10.1038/s41598-019-44389-8
Web of Science KeyUT 000469319300003
Related Url isVersionOf https://doi.org/10.1038/s41598-019-44389-8
JaLCDOI 10.18926/15436
FullText URL Mem_Fac_Eng_OU_26_2_69.pdf
Author Fujii, Tatsuo| Sakata Naoki| Nanba, Tokuro| Osaka, Akiyoshi| Miura, Yoshinari| Takada, Jun|
Abstract (001)-oriented Ti(2)O(3) films were epitaxially grown on a(001)-face of sapphire single-crystalline substrate by an activated reactive evaporation method. The formation ranges of stoichiometric and nonstoichiometric Ti(2)O(3) films were determined as a function of the substrate temperature (Ts), the oxygen pressure (Po(2)) and the deposition rate. Stoichiometric Ti(2)O(3) films were grown at Ts≧673K under Po(2)≧1.0×10(-4)Torr, which showed the metal-insulator transition with a sharp change in electrical resistivity from 3.5×10(-2) to 2.6×10(-3)Ωcm at 361K. Nonstoichiometric films prepared under less oxidized conditions did not exhibit the transition. The nonstoichiometry of the Ti(2)O(3)films was discussed in terms of excess Ti ions.
Publication Title Memoirs of the Faculty of Engineering, Okayama University
Published Date 1992-03-28
Volume volume26
Issue issue2
Start Page 69
End Page 75
ISSN 0475-0071
language 英語
File Version publisher
NAID 120002307639
JaLCDOI 10.18926/14088
FullText URL Mem_Fac_Eng_OU_41_1_93.pdf
Author Tarequl Islam Bhuiyan| Nakanishi, Makoto| Fujii, Tatsuo| Takada, Jun|
Abstract Co-precipitation method has been employed to fabricate neodymium substituted hematite with different compositions from the aqueous solution of their corresponding metal salts. Thermal analysis and X-ray diffraction studies revealed the coexistence of Fe(2)O(3) and Nd(2)O(3) phases up to 1050℃ and formation of solid solution phase among them at 1100℃ and above temperatures, which was evidenced by shifting of the XRD peaks. Unit cell parameters and the cell volumes of the samples were found to increase by adding Nd(3+) ions in the reaction process. FESEM studies showed the suppression of particle growth due to the presence of Nd(3+) ions. Spectroscopic measurement evidenced that neodymium substituted hematite exhibited brighter yellowish red color tone than that of pure α-Fe(2)O(3).
Publication Title Memoirs of the Faculty of Engineering, Okayama University
Published Date 2007-01
Volume volume41
Issue issue1
Start Page 93
End Page 98
ISSN 0475-0071
language 英語
File Version publisher
NAID 120002308163
JaLCDOI 10.18926/fest/11614
Title Alternative Preparation and Properties of ZnO Transparent Conductive Thin Films by Activated Reactive Evaporation Method
FullText URL 002_121_129.pdf
Author Fujiwara, Takashi| Fujii, Tatsuo| Nanba, Tokuro| Takada, Jun| Miura, Yoshinari|
Abstract Zinc oxide films were prepared on silica glass substrates by the use of an r.f. activated reactive evaporation (ARE) method, and were examined by X-ray diffraction (XRD) and scanning electron microscope (SEM). The electrical conductivity of the films and the doping effect of Al ions were also investigated. XRD measurements indicate that the films were c-axis oriented and that an r.f. plasma of Zn and O was necessary for the ZnO film deposition. Substrate temperature, oxygen gas pressure, evaporation rate, r.f. power and Al doping amount affect the c-axis orientation, the growth rate, the microstructure of the films and electrical conductivity. Optimum conditions with a fine texture of the surface and having good ctystallinity as well as good conductivity (≒10(-4)Ω・cm) were as follows : the substrate temperature; 200℃, the total evaporation rate; 1.0Å/s, the oxygen pressure; 2.0×10(-4) Torr, the r.f. power; 250W and the Al evaporation rare ratio; 2~6%. The films with 1.0×10(-3)Ω・cm were prepared at 50℃ for the substrate temperature.
Keywords ZnO film Al doped ZnO transparent conductive film r.f. activated reactive evaporation method
Publication Title 岡山大学環境理工学部研究報告
Published Date 1997-01-10
Volume volume2
Issue issue1
Start Page 121
End Page 129
ISSN 1341-9099
language 日本語
File Version publisher
NAID 120002313550