JaLCDOI 10.18926/15482
FullText URL Mem_Fac_Eng_OU_24_1_93.pdf
Author Totsuji, Hiroo| Hatatani, Teruki|
Abstract Propagation of charged carriers in semiconductor superlattices is analyzed on the basis of the effective mass approximation with appropriate boundary conditions at heterojunctions taken into account. Applying the finite element method, clarified are the effects of details of the potential profile, such as linear and smooth gradings and random fluctuations, on characteristics of superlattices which are expected to work as collector barriers and energy filters in electronic devices.
Publication Title Memoirs of the Faculty of Engineering, Okayama University
Published Date 1989-11-29
Volume volume24
Issue issue1
Start Page 93
End Page 105
ISSN 0475-0071
language 英語
File Version publisher
NAID 120002307513